| 摘要 |
PURPOSE:To obtain reduced dark currents with excellent reproducibility by forming constitution in which a first InP layer, a GaInAs layer and a second InP layer are formed onto an InP substrate and the lattice constant of the GaInAs layer is made larger then that of the first InP layer. CONSTITUTION:An N<-> type InP buffer layer 2 under the state in which it is aligned with an n<+> type InP substrate 1 is formed onto the substrate 1, a GaInAs optical absorption layer 3, the displacement (DELTAa/a) of alignment thereof with the InP buffer layer 2 extends over 0-0.2% or less and thickness thereof approx imately 1-2mum, onto the layer 2 and an n<-> type InP cap layer 4 onto the layer 3. A silicon nitride film 6 in approximately 0.18mum thickness is shaped to an obtained wafer. Zn is diffused through an opening for forming a light-receiving region while using the silicon nitride film 6 as a mask to shape the p<+> type light-receiving region 5.
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