发明名称 |
Method of forming neuron mosfet with different interpolysilicon oxide thickness |
摘要 |
An MOSFET device is fabricated with a plurality of conductors capacitively coupled to a first electrode, forming a mask on the surface of the first electrode exposing a predetermined zone of the first electrode, doping the first electrode through the mask, removing the mask from the surface of the first electrode, oxidizing the first electrode to form a layer of oxide over the first electrode with a thicker layer of oxide over the predetermined zone and a thinner layer of oxide elsewhere, forming at least one electrode over the first electrode on the thinner layer of oxide outside of the zone and forming at least one other electrode over the first electrode on the thicker layer of oxide inside the zone, whereby the one electrode and the other electrode have substantially different capacitive coupling to the electrode.
|
申请公布号 |
US5554545(A) |
申请公布日期 |
1996.09.10 |
申请号 |
US19940299266 |
申请日期 |
1994.09.01 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
WU, CHUNG-CHENG;YANG, MING-TZONG |
分类号 |
H01L21/822;H01L27/115;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/822 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|