| 摘要 |
A high voltage semiconductor component having a low stray current comprises a central region (N-) surrounded by P-type layers (P1, P2) forming with the central region first and second junctions (J1, J2). The first and second junctions have an apparent perimeter on a same main surface of the component. A groove is formed between said apparent perimeters and is filled with a passivation glass (18). The surface of the glass is covered, above the perimeter of each junction, with a metallization (21, 22) contacting the layer of the second conductivity type corresponding to the junction.
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