| 摘要 |
PURPOSE: To improve oxidation resistance and to reduce cost by forming an amorphous silicon carbide film on the surface of a heated carbon fiber by plasma vapor-phase synthesis using a silane derivative as a raw gas. CONSTITUTION: A raw gas contg. a silane derivative is supplied from the upper opening of a discharge tube 3, introduced into a plasma producing part 3b and brought into contact with the plasma produced from a cyclotron 6 provided at the end of a waveguide 5 through which the discharge tube 3 pierces orthogonally to generate a highly reactive radical molecule. The radical molecule is introduced into a reaction vessel 2. The radical molecule is deposited on the surface of a carbon fiber C set between the electrodes 4a and 4b of a fiber heating power cource 4 in the vessel 2 and heated to 100-600 deg.C, polymeruzed and accumulated, and an amorphous silicon carbide film is formed. |
