THE SELECTION METHOD OF SPARE WORD-LINE OF SEMICONDUCTOR MEMORY DEVICE

摘要

The method is for preventing the racing problem by selecting the normal word line and the spare word line simultaneously. The method comprises the steps of: generating a word line turn-on power according to a word line enable signal and a repair signal; and selecting the spare word line by supplying the word line turn-on power to the spare word line according to a X-decoder precharge signal and a block selecting address signal.