Correction d'erreurs dans une mémoire.

摘要

Static memory comprising memory cells (MC) arranged in rows and columns, each row of cells constituting of at least one word and a corresponding error control code. Each cell column comprises at least one specific power line (Vcc', GND') connected to a general power line (Vcc', GND') of the memory through a current detector (10, 12). Each detector activates an error signal if the associated specific supply line current exceeds a predetermined threshhold.