发明名称 NOVEL SILICON CARBIDE DUMMY WAFER
摘要 The present invention relates to an unsiliconized or siliconized wafer consisting essentially of recrystallized silicon carbide, the wafer having a diameter of at least 150 mm and a thickness of between 0.5 and 2 mm, and having a porosity or free silicon content between 15 v/o and 43 v/o.
申请公布号 CA2188290(A1) 申请公布日期 1996.09.06
申请号 CA19962188290 申请日期 1996.02.28
申请人 SAINT-GOBAIN/NORTON INDUSTRIAL CERAMICS CORPORATION 发明人 WILLKENS, CRAIG A.;ARSENAULT, NORMAND P.
分类号 C04B35/565;C04B35/573;C04B38/00;C04B41/87;C30B25/02;H01L21/02;(IPC1-7):H01L21/00;H01L21/18;C04B35/576;H01L21/70 主分类号 C04B35/565
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