Semiconductor mfr. using source and etching gases

摘要

The gases or source molecules are fed to a substrate to promoto growth of chystalline layers on it, or for its etching in semiconductor mfr. Electric protentials are applied to the substrate and to an electron beamradiator grid directly above the substrate, with the electron radiator protential differing from that applied to the substrate.The electron radiator is supplied withelectron beams from an electron gun. The substrate is irradiated by secondary electrons, generated by the electron radiator, and/or by electrons transmitted by the radiator. The radiator is an earthed fine mesh grid