发明名称 Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk
摘要 <p>A continuous electrode (5) entirely held at substantially the same potential is disposed in a plasma processing chamber (4) to define the inner wall thereof. A disk substrate (1) is placed in the electrode, and a plasma is generated around the disk substrate in a uniform state. A cross-sectional area of the plasma extending over the upper and lower surfaces of the disk substrate is made larger than a combined area of the disk substrate and its holder (2). The plasma uniformly surrounds the outer periphery and a central hole of the disk substrate. Further, a gas exhaust system (10, 32, 33, 331) for exhausting a reactive gas from the plasma processing chamber is made up of a main exhaust path (10) and a bypass exhaust path (33) such that the bypass exhaust path is used to exhaust the reactive gas at a stroke from the plasma processing chamber after plasma processing has been performed on the disk substrate, thus reducing a time required to exhaust the reactive gas. This structure enables a diamond-like carbon (DLC) protective film (36) to be uniformly formed on both surfaces of the disk substrate while improving the productivity of magnetic disk substrates. &lt;IMAGE&gt;</p>
申请公布号 EP0730266(A2) 申请公布日期 1996.09.04
申请号 EP19950105143 申请日期 1995.04.05
申请人 HITACHI, LTD. 发明人 KOKAKU, YUICHI;INABA, HIROSHI;SASAKI, SHINJI;KATAOKA, HIROYUKI;HONDA, YOSHINORI;TERAKADO, MASATOMO;FURUSAWA, KENJI
分类号 C30B29/04;C23C16/26;C23C16/27;C23C16/44;C23C16/458;C23C16/50;C23C16/509;C23C16/54;G11B5/66;G11B5/73;G11B5/84;(IPC1-7):G11B5/84 主分类号 C30B29/04
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