发明名称 |
Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk |
摘要 |
<p>A continuous electrode (5) entirely held at substantially the same potential is disposed in a plasma processing chamber (4) to define the inner wall thereof. A disk substrate (1) is placed in the electrode, and a plasma is generated around the disk substrate in a uniform state. A cross-sectional area of the plasma extending over the upper and lower surfaces of the disk substrate is made larger than a combined area of the disk substrate and its holder (2). The plasma uniformly surrounds the outer periphery and a central hole of the disk substrate. Further, a gas exhaust system (10, 32, 33, 331) for exhausting a reactive gas from the plasma processing chamber is made up of a main exhaust path (10) and a bypass exhaust path (33) such that the bypass exhaust path is used to exhaust the reactive gas at a stroke from the plasma processing chamber after plasma processing has been performed on the disk substrate, thus reducing a time required to exhaust the reactive gas. This structure enables a diamond-like carbon (DLC) protective film (36) to be uniformly formed on both surfaces of the disk substrate while improving the productivity of magnetic disk substrates. <IMAGE></p> |
申请公布号 |
EP0730266(A2) |
申请公布日期 |
1996.09.04 |
申请号 |
EP19950105143 |
申请日期 |
1995.04.05 |
申请人 |
HITACHI, LTD. |
发明人 |
KOKAKU, YUICHI;INABA, HIROSHI;SASAKI, SHINJI;KATAOKA, HIROYUKI;HONDA, YOSHINORI;TERAKADO, MASATOMO;FURUSAWA, KENJI |
分类号 |
C30B29/04;C23C16/26;C23C16/27;C23C16/44;C23C16/458;C23C16/50;C23C16/509;C23C16/54;G11B5/66;G11B5/73;G11B5/84;(IPC1-7):G11B5/84 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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