发明名称 |
Electrically programmable and erasable non-volatile memory cell and memory devices of FLASH and EEPROM type |
摘要 |
The present invention concerns an electrically programmable and erasable non-volatile memory cell having a traditional structure but being inverted in the conductivity type of the component elements and missing from the second source diffusion. In addition to possessing the known advantages of p-channel EPROM cells such as low consumption and which are still more important in view of the typical applications of FLASH and EEPROM memories they are easier to integrate with MOS transistors of traditional logic circuits because their structure is more similar thereto. <IMAGE>
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申请公布号 |
EP0730310(A1) |
申请公布日期 |
1996.09.04 |
申请号 |
EP19950830071 |
申请日期 |
1995.03.03 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
BALDI, LIVIO;PARUZZI, PAOLA |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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