发明名称 Wafer bonding of light emitting diode layers
摘要 <p>A method of stacking light emitting diodes (LEDs) comprises the steps of epitaxially growing first LED layers (34,36,38) to form a first LED structure (40); epitaxially growing second LED layers (66,68,70) to form a second LED structure (64); stacking the first LED structure onto the second LED structure; and wafer bonding the first LED structure to the second LED structure.</p>
申请公布号 EP0730311(A2) 申请公布日期 1996.09.04
申请号 EP19960106637 申请日期 1994.01.21
申请人 HEWLETT-PACKARD COMPANY 发明人 KISH, FRED A.;STERANKA, FRANK M.;DEFEVER, DENNIS C.;ROBBINS, VIRGINIA M.;UEBBING, JOHN
分类号 H01L21/02;H01L21/20;H01L21/60;H01L25/075;H01L33/00;H01L33/14;H01L33/30;(IPC1-7):H01L33/00 主分类号 H01L21/02
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