| 发明名称 |
Vertical switched-emitter structure with improved lateral isolation |
| 摘要 |
<p>A vertical switched-emitter device structure in which the body of a vertical-current-flow MOS device is formed in a P-type surface epi region, and dielectric isolation laterally separates the body from the surface contact to the buried P-type base region. <IMAGE></p> |
| 申请公布号 |
EP0730302(A2) |
申请公布日期 |
1996.09.04 |
| 申请号 |
EP19960301273 |
申请日期 |
1996.02.26 |
| 申请人 |
STMICROELECTRONICS, INC. |
发明人 |
BLANCHARD, RICHARD A. |
| 分类号 |
H01L21/8222;H01L21/8248;H01L27/06;H01L27/07;H01L27/088;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L27/07 |
主分类号 |
H01L21/8222 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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