| 摘要 |
PURPOSE:To make a current flow in a layer in the lateral direction and to obtain an HBT, in which a base region can be made very thin, by providing a base region comprising a central strip shaped impurity region in a semiconductor super lattice, providing base region comprising impurity regions on both sides of the impurities of the super lattice, and providing emitter and collector regions so as to form a heterojuction in the direction of the layer in a mixed crystal state. CONSTITUTION:Be ions are implanted in a region, which is to become a base region 8 in a super lattice, which comprises an Si doped N-type AlGaAs layer 6 and an N-type GaAs layer, by using a converged ion beam. Thereafter the entire super lattice is annealed. Thus the mixed crystal of the N-type AlGaAs layer and the N-type GaAs layer is yielded at a part other than the ion implanted region, and a wide gap region is formed. In the ion implanted region, where Si and Be are commonly present as impurities, the mixed crystal of the super lattice is not yielded even if annealing is performed. Therefore a lateral HBT having a double heterojunction in the lateral direction can be formed in the layer. In this manufacturing process, a narrow-gap base region can be formed very finely and simply. Therefore, the high speed HBT can be manufactured at the excellent yield rate.
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