| 摘要 |
PURPOSE: To make it possible to execute a precise control of the pitch of a diffraction grating by a simple process without decreasing the junction-error correcting accuracy of the exposing field of an apparatus by applying an elec tron beam on a plurality of grating points in an area smaller than the diameter of the electron beam for exposure, and forming a pattern with the peak position of the sum of the irradiation amount as the center. CONSTITUTION: An electron beam is cast on one point, and the exposing amount I0 required for forming a pattern is made to be 1.0. At this time, the exposing amount is set at 0.8 at a point (X0 , Y0 ), which is indicated by ○ on the stage of an exposing device on the expossing amount is set at 0.2 at a point (X0 , Y1 ), which is indicated by ○ that is separated by the minimum moving distance (d) of the electron beam. In this way, the electron beam is cast. The central position of the exposed pattern becomes a point (a) (X0 , Y0 +d/5) indicated by a black dot. A pattern whose center is the point other than the grating point is formed. In this way, the precise control of the pitch of the diffraction grating, which is not limited by the minimum moving distance of the electron beam of the exposure device can be performed by the simple process without decreasing the junction-error correcting accuracy of the exposing field. |
