发明名称 PHASE-SHIFT LITHOGRAPHIC MASK AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide the structure of an alternate element phase shift mask and its fabrication. SOLUTION: All mask pattern elements extended in the X-direction are formed on a first mask board, and all mask pattern elements extended in the Y-direction are formed on a second mask board. Two mask boards are combined into a single mask for the single exposing process on a wafer, or individual masks are separately exposed, and they are overlapped on a single mask wafer.
申请公布号 JPH08227140(A) 申请公布日期 1996.09.03
申请号 JP19950283553 申请日期 1995.10.31
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 BAAN JIENGU RIN
分类号 G03F1/26;G03F1/30;G03F1/32;G03F7/20;H01L21/027 主分类号 G03F1/26
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