| 摘要 |
Applicants have discovered an improved photodefined dielectric materials comprising poly(aromatic diacetylenes). The preferred poly(aromatic diacetylenes) are copolymers of aromatic diacetylenes. Specific examples are 1) a copolymer of 4,4'-diethynyldiphenyl ether and m-diethynyl benzene and 2) a copolymer of 4,4'-diethynyldiphenyl ether and 4,4'-bis(3-ethynylphenoxy)-2,2',3,3',5,5',6,6'-octaflurorbiphenyl. These copolymers can be photochemically crosslinked in patterns with exposure of 30 mJ/cm2 mu m and 60 mJ/cm2 mu m, respectively, and patterns have been produced in 10 mu m thick films with features as small as 12 mu m.
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