| 摘要 |
PROBLEM TO BE SOLVED: To reduce an effective inductance of terminal leads connected to the gate, source region and drain region of a circuit by a method, wherein two respective flat conductors which are insulated from each other and laid in parallel with each other are connected by ohmic connection to two positions of a circuit device. SOLUTION: A drain conductor 12 of a laminated structure 10, which is composed of a flat source conductor 11, a thin insulating stripe 13, and the flat drain conductor 12 is connected directly to the 1st surface part 61 of a conductor plate layer 54, except the 2nd surface part 62 of the conductor plate layer 54. A plurality of wires 81 are connected directly to the source terminal region 83 and source electrode layer 11 of a MOSFET device 71. An electrical connection between the drain conductor 12 of a source/drain structure 10 and the drain region of the device 71 are obtained by the direct electrical and mechanical connection between a drain electrode on the bottom of the die of the device 71 and the drain plate layer 54. |
