| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM unit cell whose occupation area in a substrate is made minimum. SOLUTION: A trench capacitor 22, an operation word line 36 and a planar- type FET 26 are provided. The trench capacitor has a signal electrode 24 and a bit line 48. The operation word line 36 is made to overlap the trench capacitor. The conducting route of the planar-type FET is connected between the signal electrode 24 and bit line 48 of the trench capacitor, and the gate electrode of the planar-type FET is composed of the operation word line 36. |
