| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for making an Si compd. embedded layer on a heavily doped Si layer, without forming an Si compd. and ohmic- contacting the Si compd. to an n-type Si and this method is suited for diffusion, without requiring an excessive island thickness. SOLUTION: An embedded Si compd. layer 111 in a bonded wafer 105 makes an ohmic contact with a heavily doped embedded layer. The dopant diffuses rapidly into adjacent semiconductors, through the Si compd. layer to form the embedded layer.
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