OXIDE THIN FILM HAVING ROCK CRYSTAL STRUCTURE AND ITS PRODUCTION

摘要

PURPOSE: To obtain an oxide thin film having rock crystal structure of polycrystal or single crystal having an arbitrary film thickness without requiring large-scale apparatus used by hydrothermal synthetic method. CONSTITUTION: This oxide thin film having a rock crystal type crystalline structure comprising >=1 layer, consisting essentially of silicon dioxide or germanium dioxide or their mixture and having 5nm to 50μm thickness is formed on a substrate by vapor phase deposition method at 400-1200 deg.C substrate temperature using a raw material containing at least Si and/or Ge and preferably further containing one or more kinds of alkali metals.