发明名称 |
Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence |
摘要 |
An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.
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申请公布号 |
US5552659(A) |
申请公布日期 |
1996.09.03 |
申请号 |
US19940269312 |
申请日期 |
1994.06.29 |
申请人 |
SILICON VIDEO CORPORATION |
发明人 |
MACAULAY, JOHN M.;SPINDT, CHRISTOPHER J.;CORCORAN, PATRICK A.;VENEKLASEN, LEE H. |
分类号 |
H01J3/02;(IPC1-7):H01J1/02 |
主分类号 |
H01J3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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