发明名称 THIN FILM TRANSISTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To improve the on/off ratio of source/drain currents by selecting an organic material from organic substancesα-nT or a group constituted of derivatives thereof, and allowing the organic material to have a specified electrical conductivity at a constant temperature. SOLUTION: A transistor 20 is constituted of a substrate 11, source electrode 12 being a first contact, drain electrode 13 being a second contact, gate electrode 14 being a third contact, gate dielectric 15, and active layer 16 of an organic material. The organic material is a material calledα-nT made of a carbon isotope other than a certain type of carbon or diamond combined with another element, where (n) is ranging from 4 to 9, and is selected from a group having a substitutional group on the fourth or fifth carbon of a terminating circle. Also, the organic layer is constituted of a material having a conductivity of 5×10<-8> S/cm at the most at a temperature of 20 deg.C after deposition or rapid thermal anneal. In a materialα-6T ((n) is 6), the electrical conductivity can be reduced and the on/off ratio of the source/drain currents can be improved.
申请公布号 JPH08228035(A) 申请公布日期 1996.09.03
申请号 JP19950345454 申请日期 1995.12.11
申请人 AT & T CORP 发明人 ANANSU DODABARAPUA;HAWAADO EDAN KATSUTSU;RUIZA TOOSHI
分类号 H01L51/05;G11C13/02;H01L29/786;H01L51/30;H01L51/40;(IPC1-7):H01L51/00 主分类号 H01L51/05
代理机构 代理人
主权项
地址
您可能感兴趣的专利