| 摘要 |
PURPOSE:To increase a limit temperature in a manufacturing process and to improve the heat resistance and the high speed property of an SiC substrate, by forming single crystal SiC which is to become an element substrate on an insulating film on a supporting substrate of single crystal SiC or polycrystalline SiC. CONSTITUTION:A mixed gas of propane and silane is made to flow, and an Si substrate is heated at a high temperature. Then, single crystal SiC 3 is grown on the substrate by a heteroepitaxial method. Then, an SiO2 film is formed on the entire surface by a CVD method, and polycrystalline SiC 1 is grown on the film 2. The SiC substrate is removed by etching, and a substrate A is formed. An SiO2 film 12 and single crystal SiC 13 are laminated on single crystal SiC 11 and a substrate B is formed by the similar way as the manufacturing process of the substrate A. When the single crystal SiC or the polycrystalline SiC is used, a limit temperature in the manufacturing process for the substrates A and B is increased, and the heat resistance and the high speed property of the SiC substrate is improved.
|
