| 摘要 |
PURPOSE: To obtain a wafer heater with electrostatic attracting function which exhibits sufficient electrostatic attraction in an intermediate temperature zone while protecting a device against damage due to leak current. CONSTITUTION: In the wafer heater with electrostatic attracting function, a supporting basic material 1 composed of a sintered mixture of boron nitride and aluminum nitride is bonded, on one side thereof, with a heating layer 2 of thermal decomposition graphite and an insulation layer 3 composed of thermal decomposition boron nitride is bonded thereon. The basic material is bonded, on the other side thereof, with an electrostatic attraction electrode 4 composed of thermal decomposition graphite and an insulation layer 5 composed of thermal decomposition baron nitride, containing 1-10wt.% of silicon, is bonded thereon. |
