VISIBLE LIGHT SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE: To provide an AlGaInP base semiconductor device in excellent manufacturing yield as well as in less dispersion of the oscillation threshold value current per manufactured device. CONSTITUTION: This visible light semiconductor laser device is provided with a GaAs substrate 11 and an A/GaInP base semiconductor layer containing an active layer 14 laminated on one main surface of the GaAs substrate 11 as well as an oblique surface exceeding 5 deg. from one main surface (100) of the GaAs substrate 11 in the (011) direction is also used.