| 摘要 |
PURPOSE: To provide a GaP base semiconductor light emitting element capable of enhancing the total light emitting brightness by increasing the outgoing frequency of the beams toward a substrate back side to the outside of the element. CONSTITUTION: This GaP base semiconductor light emitting element is provided with the epitaxial laminated parts 2, 3, 4 containing at least the first epitaxial layer 2 made of a GaP having the same conductivity type as that of a GaP substrate 1 and the second epitaxial layer 3 made of another GaP having the inverse conductivity type to that of the GaP substrate 1. In such a constitution, the thickness of the epitaxial laminated parts 2, 3, 4 corresponds to 40%-50% of the total thickness of the GaP substrate 1 and the epitaxial laminated parts 2, 3, 4. |
