| 摘要 |
PURPOSE: To improve manufacture yield by providing a GaAs substrate having a main surface inclined at an angle not less than 5 deg. in the direction [011] from the plane (100) and an AlGaInP based semiconductor layer, and setting the angle so that the hillock of the AlGaInP based semiconductor layer is at a predetermined level or less. CONSTITUTION: A main surface 1a of a substrate 1 made of n-type GaAs is inclined by abrasion at an angle not less than 5 deg. in the direction [011] from the plane (100). A buffer layer 2, and a clad layer 3 made of n-type (Alx1 Ga1-x1 )y1 In1-y1 P, are sequentially formed. By setting the angle in the direction [011] from the plane (100) to not less than 5 deg., a crystal defect called hillock is rapidly reduced from Ga0.5 In0.5 P and (Alx Ga1-x )0.5 In0.5 P. By setting the angle so that the hillocks are reduced to 100 pieces/cm<2> or less, it is possible to improve crystal property, increase manufacture yield, and realize longer life. |
