| 摘要 |
<p>PURPOSE: To enhance a device which is etched using a resist film as mask in pattern dimensional accuracy by a method wherein the resist film is least lessened in thickness when resist residues left after the development of the resist film are removed. CONSTITUTION: Resist residues 5 left after the development of a photoresist film 4 are removed by irradiation with plasma generated by the use of He gas through a parallel plate-type plasma device, whereby the photoresist film 4 is capable of being restrained from being lessened in thickness.</p> |
