MANUFACTURING METHOD OF BUMP OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of; forming an electrode pad(4) on a semiconductor chip(100), forming a passivation film(6) exposed to most of electrode pads; forming the first metal layer; forming the first mask layer having the first entrance unit in the region for a form of bump(16); forming the second metal layer in the first entrance unit; forming the second mask layer having a plurality of the second entrance unit; forming the third metal layer of an island type which is connected with the second metal layers respectively.