| 摘要 |
PURPOSE: To reduce amount of charges to be collected to a cell node even when theα-ray is applied by extending, for enlargement, at least either one of the source/drain diffused layer regions of transfer transistor respectively connected to the first and second bit lines to the side of the first and second cell node sides. CONSTITUTION: The source/drain diffused layer 13 of a transfer transistor 3 as TR1 is connected to a bit line 31 and cell node 11 as N1 via a contact hole 9, while the source/drain diffused layer 14 of a transfer transistor 4 as TR2 is connected to a bit line 32 and cell node 12 as N2 via a contact hole 10. The region of source/drain diffused layer 14 of transfer transistor 4 as TR2 connected to the bit line 32 via the contact hole 10 is formed by extending it, for enlargement, to the side of the N2 solenoid 12.
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