MANUFACTURING METHOD OF FIELD OXIDE OF SEMICONDUCTOR DEVICE

摘要

The method of forming field oxide film of semiconductor device comprises the steps of : forming a first nitrided film(33) and an etching barrier film(34) after forming a pad oxide film(32) on a semiconductor substrate(31); forming a second nitrided film(35); forming a deposited layer(36) for a spacer after etching the second nitrided film(35) and the etching barrier film(34) selectively until the part of the pad oxide film(32) is etched; etching the second nitrided film(35) and the first nitrided film(33) simultaneously; and forming a field oxide film(37) by thermal oxidation and removing the pad oxide film(32).