METHOD FOR CRYSTAL GROWTH OF GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR

摘要

PURPOSE: To improve the crystallizability of a gallium nitride based compound semiconductor and further to make the semiconductor stable and to make it grow with an excellent yield. CONSTITUTION: A method for crystal growth wherein a crystal of a gallium nitride based compound semiconductor of which the general formula is expressed by GaXAl1-XN (0<=X<=1) is laminated on a substrate being different therefrom in a thermal expansion coefficient and a lattice constant. The crystallizability of the semiconductor can be improved greatly by using a GaN buffer layer made a single crystal partially, by making the substrate amorphous by partial ion implantation and by preparing a lattice-shaped insulator pattern on the substrate.