METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY CELL

摘要

forming a gate by a gate polysilicon after depositing a gate oxide and the gate polysilicon on a semiconductor substrate; forming a lightly-doped source/drain region and forming a side wall on the side of the gate by etchback of an oxide; forming a highly-doped source/drain and depositing a first polysilicon and etching the first polysilicon to reveal the drain region; defining a bit line contact hole by depositing a photoresist after depositing a dielectric, a second polysilicon and a BPSG; etching the BPSG, the second polysilicon and the dielectric to reveal the drain region; reflowing to oxidize the revealed side of the second polysilicon; and depositing a metal on top of the BPSG.