| 摘要 |
<p>PURPOSE: To obtain large mutual inductance with less self-resonance frequency drop. CONSTITUTION: On the surface of a semiconductor substrate 11A, the first flat coil 12A, etc., are formed with pattern wiring of an arbitrary conductor, and, with an insulation layer 13 of specified thickness in between, the second flat coil 12B, etc., which has a form after the pattern wiring of the first flat coil 12A, etc., are formed with pattern wiring of an arbitrary conductor on the surface 13A of the insulation layer. By this, large mutual inductance is obtained, and, with the use of the first transformer for output of five terminals, an amplifier is formed, so that power amplification in a B class push-pull operation is attained.</p> |
