| 摘要 |
PURPOSE: To prevent the penetration of a contact on a capacitor upper electrode from being generated when other contacts are opened. CONSTITUTION: A silicon oxide film 7 is formed on base patterns, such as bit lines 6, cylindrical capacitors 9 and lower electrodes 93 of the capacitors 9 are respectively formed on the upper surface of the film 7 and in apertures provided in the film 7 and moreover, a striplike and cylindrical capacitor dummy pattern 33 is formed on the upper surface, which lies directly under a CP contact 35, of the film 7. A capacitor dielectric film 10 and capacitor upper electrodes 11 are formed in such a way as to cover the pattern 33. Accordingly, even if the contact 35 penetrates through the capacitor upper part electrode 11 in the worst case when other contacts 91 and 92 are opened, at the penetration of the contact 35 is stopped at the pattern 33 and does not reach the base pattern. |
