| 摘要 |
PURPOSE: To separate a semiconductor chip from a wafer by a method wherein a groove is formed, in a region other than an optical waveguide for the element at a specific depth from a crystal surface, on the substrate on which a semiconductor crystal has been grown and which has no cleavage property, a stress is applied across both ends of the wafer in a position parallel to the part of the groove and an optically smooth face is formed without giving a strain. CONSTITUTION: A groove 12 is formed, by a dicing operation, in a region other than an optical waveguide 11 for an element at a depth of 1μm or lower from a crystal surface, on the surface, of a substrate 10 in which a semiconductor crystal has been grown on the surface and which has no cleavage property. Then, a rod 13 whose diameter is nearly equal to the thickness of the wafer is brought into contact with a face on the opposite side of the groove 12 in a position parallel to the groove 12, and a stress is applied to the substrate 10 so as to be separated into chips. When the surface accuracy of the separation face of a gallium nitride-based compound semiconductor chip obtained in this manner is measured, it is 1% inside a face of 1×0.5mm. In addition, electrodes are derived from a p-type layer and an n-type layer, and a forward current and a forward voltage are measured. They are 20mA and 4V, respectively, which are small values as compared with those in conventional cases. |
