| 摘要 |
PURPOSE: To provide an exposure mask and exposing method with which the enlargement Of a margin for superposition of mask patterns is made possible and a min. alignment size is obtainable even if mask shapes are not irregularly changed. CONSTITUTION: The size A between the paralleled mask patterns of the mask for forming fields is set at the min. resolution threshold size and the size C between the angle parts of the projecting parts of the mask patterns of the projecting shape of the mask 11 for forming fields and the angle parts in the base part of the adjacent mask patterns of the projecting shape is set at bout 2/3 of the size A. As a result, the area of the mask patterns is substantially enlarged and the margin for superposition of the case the mask patterns and another mask patterns are superposed is eventually widened and, therefore, the superposition margin of the fine patterns in production of semiconductor devices having a high integration scale is sufficiently obtd. |
