DRAM CELL ARRAY

摘要

forming an active region with a diagonal pattern, forming a bit line(11) in the Y direction through a center of the active region; forming the bit line contact(12) in an alternate part of the bit line and the active region, forming a node contact(13) on two ending points of the active region, forming a capacitor on the node contact(13); forming an word line(14) of zigzag type in the X direction between the node contact(13) and the bit line contact(12).