SEMICONDUCTOR DEVICE EMPLOYING INTERLAYER CONTACT STRUCTURE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element, adopting the contact structure between an upper conductive layer and a lower conductive layer. SOLUTION: In a contact structure between a lower conductive layer of such a structure that a first conductivity layer 14 and the first silicide layer 16' are stacked and an upper conductive layer of such structure that a second conductivity layer 22' doped with impurities and the second silicide layer 24 and stacked, the first conductivity layer 14 and the second conductivity layer 22' contact directly with each other. Accordingly, the electrical properties of the element can be improved by lowering the contact resistance between the lower conductive layer and the upper conductive layer.