发明名称 |
SEMICONDUCTOR APPARATUS WITH CRYSTAL DEFECTS AND PROCESS FOR ITS FABRICATION |
摘要 |
It is an object to provide a semiconductor apparatus having both fast switching characteristics and high dielectric breakdown strength or small leakage current characteristics, as well as a process for fabricating such improved semiconductor apparatus. The apparatus comprises a semiconductor substrate; a semiconductor layer on said semiconductor substrate, said semiconductor layer having a pn junction formed along the surface of said semiconductor substrate, wherein crystal defects being formed by irradiation with particle rays to the only vertical direction of said pn junction; and a silicon nitride film provided on the substrate surface of said layer for restraining the exposure to particle rays being provided on the substrate surface of said element in the areas other than said pn junction. |
申请公布号 |
WO9626536(A1) |
申请公布日期 |
1996.08.29 |
申请号 |
WO1996JP00368 |
申请日期 |
1996.02.19 |
申请人 |
ROHM CO., LTD.;SAKAMOTO, KAZUHISA |
发明人 |
SAKAMOTO, KAZUHISA |
分类号 |
H01L21/26;H01L21/263;H01L21/322;H01L21/329;H01L21/331;H01L21/336;H01L29/32;H01L29/73;H01L29/732;H01L29/78;H01L29/861 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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