发明名称 METHOD FOR PRODUCING UNIAXIAL TETRAGONAL THIN FILMS OF TERNARY INTERMETALLIC COMPOUNDS
摘要 A method for making oriented thin films of a ternary intermetallic compound and such films having a tetragonal structure and generally uniaxial magnetic, optical, electronic, and mechanical properties, as well as a generally lower Curie temperature than oriented binary intermetallic films. The steps of the method involve selecting a substrate material for biasing the orientation of the ternary intermetallic compound and exhibiting no chemical reactiveness to the ternary intermetallic compound. Preferably, such substrate is a single crystal, such as MgO or Al2O3, or an amorphous material such as pure SiO2, amorphous carbon, or glass. In a second step the substrate is heated to a temperature above 450 DEG C and then, a first metal, a second metal, and a third metal are simultaneously deposited on the substrate material. The first metal and second metal are selected from among metals pairs including CoNi, CoFe, FeNi, and the third metal is selected from the group of metals consisting of Pd and Pt. The thin film formed is a ternary intermetallic compound exhibiting an L10 crystal structure and the desired uniaxial properties. The method of the invention allows to accurately control the relative amounts of the three metals.
申请公布号 WO9626305(A1) 申请公布日期 1996.08.29
申请号 WO1996US02351 申请日期 1996.02.23
申请人 BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UN 发明人 VISOKAY, MARK, R.;LAIRSON, BRUCE, M.;SINCLAIR, ROBERT
分类号 C23C14/02;C23C14/18;C30B23/02;G11B5/64;G11B11/105;H01F41/18;H01F41/30 主分类号 C23C14/02
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