The fault latch and filter circuit used in a MOSgated driver for a high side power MOSgated device to turn off the MOSgated device high side output in response to a given fault condition is located in the high side of the circuit and in a floating well of a semiconductor chip containing the driver circuit. The fault latch and filter are connected to the output driver circuit through a gate which also receives the high side filter and latch which are operated by the input control logic circuits through a level-shift up circuit. The fault latch circuit has an output which is level-shifted down by a single PMOS device to a fault reporting latch circuit on the low side of the device.
申请公布号
DE19605593(A1)
申请公布日期
1996.08.29
申请号
DE1996105593
申请日期
1996.02.15
申请人
INTERNATIONAL RECTIFIER CORP., EL SEGUNDO, CALIF., US
发明人
WILHELM, DANA, TEMPLE CITY, CALIF., US;HOUK, TALBOTT M., CULVER CITY, CALIF., US