| 摘要 |
PURPOSE:To obtain a semiconductor electrode which is stable in performance even if it is used in a solution by a method wherein the surface of a semiconductor is coated with a thin film of precious metal, then the surface of the thin film is covered with a solution of long-chain alcyl thiophene polymer used in doping, and a solvent is evaporated to form a polymer film. CONSTITUTION:The surface of a semiconductor is coated with a thin film of precious metal, then the surface of the thin film is covered with a solution of long-chain alcyl thiophene polymer used in doping, and a solvent is evaporated to form a film of long-chain alcyl thiophene polymer. For instance, an N-type single crystal silicon semiconductor etched by hydrofluoric acid is put in a vacuum evaporation device, and gold placed distant from the silicon semiconductor by 7cm is heated to be evaporated on the surface of the silicon semiconductor for 20 seconds under vacuum. On the other hand, a solution composed of 1ml of chloroform into which 0.3mg of 3-dodecyl thiophene polymer doped with trifluoromethane sulfonic acid ions is dissolved is prepared, and the chloroform solution is made to drip on the surface of the silicon semiconductor coated with a gold thin film to coat, and the solvent is evaporated to form a 3-dodecyl thiophene polymer film on the surface of the semiconductor concerned. |
