发明名称 REACTIVE SPUTTERING DEVICE
摘要 Known magnetron sputtering sources must sputter coatings of uniform thickness and stoichiometry on substrates of more than 100 mm diameter. Known magnetron sputtering sources consist of several partial targets with parameters that must be independently selected from each other. The discharge must be stable during the whole use of the target. The disclosed magnetron sputtering source for unipolar and bipolar operation consists of concentric partial targets. Isolated intermediate pieces that may be switched to any electric potential are arranged at the centre, between and all around the targets. An adjustable gas inlet for reactive gas and/or for a mixture of reactive gas and inert gas is associated to at least one partial target. An isolated additional electrode is arranged around the outermost partial target. The sputtering source is preferably used to produce optical and anticorrosive coatings.
申请公布号 WO9626533(A1) 申请公布日期 1996.08.29
申请号 WO1996DE00114 申请日期 1996.01.23
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWAND;FRACH, PETER;WALDE, HENDRIK;GOTTFRIED, CHRISTIAN;HOLFELD, ANDREAS;GOEDICKE, KLAUS 发明人 FRACH, PETER;WALDE, HENDRIK;GOTTFRIED, CHRISTIAN;HOLFELD, ANDREAS;GOEDICKE, KLAUS
分类号 H01J37/34 主分类号 H01J37/34
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