| 摘要 |
<p>A semiconductor device comprises a heat radiator forming a principal portion of a package body; a millimeter-wave semiconductor element, such as a Gunn diode, fixed on its back surface to the heat radiator; a hollow cylindrical insulator encompassing the semiconductor element and having a lower end in contact with the heat radiator and an upper end a predetermined distance away from the surface of the semiconductor element; a metallic foil for connecting the upper end of the insulator to the upper surface of the semiconductor element; and a cover alloyed with a part of the metallic foil and fitted to the upper end of the insulator to close its hollow, wherein the thickness of the insulator in the radial direction thereof is from 0.08 to 0.14 mm. According to this structure, a high output operation can be attained in a millimeter band above 90 GHz.</p> |
