发明名称 |
Process of damage etching the backside of a semiconductor wafer with protected wafer frontside |
摘要 |
Before the wafer is diced into individual chips, the thinly ground wafer is subjected to microwave or HF excited chemical downstream plasma etching using a fluoride (e.g. CF4, NF3 or SK6) in the etchant gas. In the microwave version of the process, the face of the wafer is protected by a film, so that it can be transported conventionally and etched from above. The operation is completed in the space of 10 seconds to 4 minutes according to the method of grinding and the etchant chemistry for removal of about 200 nm..
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申请公布号 |
EP0729176(A2) |
申请公布日期 |
1996.08.28 |
申请号 |
EP19960101674 |
申请日期 |
1996.02.06 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
MATHUNI JOSEF, DR. DIPL.-PHYS. |
分类号 |
C23F4/00;H01L21/301;H01L21/302;H01L21/304;H01L21/3065;H01L21/308;H01L21/78;(IPC1-7):H01L21/306 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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