发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To avoid the stage breakage of teh substrate metal film, by forming the second insulating protection film for the film thickness increment onto the first insulating protection film covering the wiring layer and then providing the substrate solder metal film only within the aperture for the external electrode lead-out purpose which is drilled to the second protection film.</p>
申请公布号 JPS5390862(A) 申请公布日期 1978.08.10
申请号 JP19770004946 申请日期 1977.01.21
申请人 HITACHI LTD 发明人 KANZAWA RIYOUSAKU;MURAKAMI SUSUMU;HOSOKAWA YOSHIKAZU
分类号 H01L21/60;H01L21/28 主分类号 H01L21/60
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