| 摘要 |
<p>An N<-> type epitaxial layer (2) is formed on a P type semiconductor substrate, and a P<+> type insulative isolating layer (8) is so formed as to reach the semiconductor substrate from the surface of the N<-> type epitaxial layer (2) to define a device forming region in the N<-> type epitaxial layer (2). An N<+> type source diffusion layer (3) and an N<+> type drain diffusion layer (4) are formed on the N<-> type epitaxial layer (2) in the device forming region, apart from each other in one direction. A plurality of P<+> type gate diffusion layers (5) are formed between the N<+> type source diffusion layer (3) and N<+> type drain diffusion layer (4), apart from one another in a direction perpendicular to the one direction. Channel regions (6) for controlling the source-drain current are formed between the P<+> type insulative isolating layer (8) and the gate diffusion layer (5) and between adjoining gate diffusion layers (5). <IMAGE></p> |
