| 摘要 |
<p>Disclosed herein is a semiconductor device including a thin-film-transistor which comprises a silicon film formed on an insulating layer and including a substrate area, a gate provided to form a channel in the substrate area, a source consisting of a first metal silicide film forming a Schottoky barrier with the substrate area, and a drain including a second metal silicide film. The second metal silicide film forms a Schottoky barrier with the substrate area or is in ohmic contact with an impurity region selectively formed in the silicon film with a PN junction with the substrate area. <IMAGE></p> |
