| 摘要 |
A metal ion implanting apparatus according to the present invention includes a vacuum vessel also serving as an anode, a holder for holding a substrate to be processed, a plurality of arc evaporation sources,a plurality of arc power supplies and a bias power supply. Each of the plurality of arc evaporation sources has a cathode including at least one of metal and a metal compound. The cathode evaporates cathode substance by arc discharge between the cathodes and the vacuum vessel also serving as the anode. Each of the plurality of arc power supplies supply an arc discharge voltage between the cathode of the arc evaporation source corresponding to the arc power supply and the vacuum vessel with the cathode as a negative side. The bias power supply for applying a negative pulse-like bias voltage on a base of a potential of the vacuum vessel to the holder and the substrate held by the holder. <IMAGE> |
